? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c 9.5 a i dm t c = 25 c, pulse width limited by t jm 56 a i ar t c = 25 c14a e ar t c = 25 c50mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c v isol 50/60 hz, rms, t = 1 min 2500 v~ i sol = 1ma, t = 1 s 3000 v~ f c mounting force 20..120 / 4.6..27 n/lb weight 5 g hiperfet tm power mosfets electrically isolated tab n-channel enhancement mode avalanche rated, low q g low r g , high dv/dt, low t rr features z double metal process for low gate resistance z epoxy meet ul 94 v-0, flammability classification z low r ds (on) , low q g z avalanche energy and current rated z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = i t 0.90 ? pulse test, t 300 s, duty cycle d 2 % ds99229(11/04) advanced technical data IXFR14N100Q2 v dss = 1000 v i d25 = 9.5 a r ds(on) = 1.0 ? ? ? ? ? t rr 300 ns g = gate e = source c = drain isolated tab e g c isoplus247 (ixfr) e153432
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , pulse test 10 14 s c iss 2700 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 300 pf c rss 100 pf t d(on) 12 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 10 ns t d(off) r g = 2 ? (external), 28 ns t f 12 ns q g(on) 83 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 20 nc q gd 40 nc r thjc 0.62 k/w r thck 0.25 k/w note: test current i t = 7a source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 14 a i sm repetitive; pulse width limited by t jm 56 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 300 ns q rm 0.8 c i rm 0.7 a i f = i s , -di/dt = 100 a/ s, v r = 100 v IXFR14N100Q2 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 isoplus247 outline
? 2004 ixys all rights reserved IXFR14N100Q2 fig. 2. extended output characteristics @ 25 deg. c 0 3 6 9 12 15 18 21 24 27 051 01 5202530 v ds - volts i d - amperes v g s = 1 0v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 2 4 6 8 10 12 14 0 5 10 15 2 0 2 5 3 0 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 2 4 6 8 10 12 14 02468101214 v ds - volts i d - amperes v g s = 1 0v 5v 6v 7v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalized i d = 1 4a i d = 7a v g s = 1 0v fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 0 3 6 9 12 15 18 2 1 2 4 2 7 i d - amperes r d s (on) - normalize d t j = 1 25 o c t j = 25 o c v g s = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. IXFR14N100Q2 fig. 11. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 10 203040 5060708090 q g - nanocoulombs v g s - volts v d s = 500v i d = 7a i g = 1 0ma fig. 7. input admittance 0 3 6 9 12 15 18 21 44.5 55.5 66.5 7 v gs - volts i d - amperes t j = 1 20 o c 25 o c -40 o c fig. 12. maximum transient thermal resistance 0.01 0.1 1 1101001000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 4 8 12 16 20 24 28 03691 21 51 82124 i d - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 9. source current vs. source-to-drain voltage 0 7 14 21 28 35 42 0.3 0.5 0.7 0.9 1.1 1.3 v sd - volts i s - amperes t j = 1 25 o c t j = 25 o c fig. 12. maximum transient thermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w)
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